IXFN180N25T MOSFET MOD.168A 250V N-CH SOT227B GIGAMOS CHASSIS

IXFN180N25T MOSFET MOD.168A 250V N-CH SOT227B GIGAMOS CHASSIS Description

IXFN180N25T MOSFET MOD.168A 250V N-CH SOT227B GIGAMOS CHASSIS The IXFN180N25T, manufactured by IXYS, is a high-performance module MOSFET designed for mosfet mod.168a 250v n-ch sot227b gigamos chassis. It provides excellent performance and reliability for high-power applications. The MOSFET supports a current rating of 168A and a voltage rating of 250V, with a low on-resistance of 12.9m Ohms ensuring efficient operation. It can handle a power dissipation of up to 900W, making it ideal for demanding environments. The reverse recovery time is 200ns, allowing for fast switching. Operating within a temperature range of -55°C~+150°C, it offers robust performance across various conditions. As a rohs-compliant product, it meets strict environmental standards. Packaged in tube format, it ensures secure handling and storage. With its advanced features and durable design, the IXFN180N25T is an excellent choice for professionals seeking high-quality module MOSFET solutions.

IXFN180N25T MOSFET MOD.168A 250V N-CH SOT227B GIGAMOS CHASSIS Technical Specifications

• Manufacturer: IXYS
• MountingType: Chassis
• Package  /Case: SOT227B (Minibloc)
• Technology: GigaMOS
• FetType: N-CH
• Current(25°C): 168A
• Voltage: 250V
• RdsOn: 12.9m Ohms
• PowerDissipation: 900W
• Trr: 200ns
• Configuration: Single
• Applications:
• OperatingTemperature: -55°C~+150°C
• Rohs: ROHS
• Packaging: TUBE

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